inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK260 description drain current C i d =5a@ t c =25 drain source voltage- : v dss = 400v(min) fast switching speed applications designed especially for high voltage,high speed applications absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 400 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 5 a p tot total dissipation@tc=25 125 w t j max. operating junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.67 /w r th j-a thermal resistance,junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK260 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 400 v v gs(th) gate threshold voltage v ds = 10v gs ; i d = 10ma 0.4 3.0 v r ds(on) drain-source on-stage resistance v gs = 15v; i d = 3a 2.5 3.0 i gss gate source leakage current v gs = 20v; v ds = 0 100 ua i dss zero gate voltage drain current v ds =320v; v gs = 0 1 ma v ds(on) drain-source saturation voltage i f = 3a; v gs = 15v 7.5 9.5 v ton turn-on time v gs =15v;i d =2a; r l =50 25 ns toff turn-off time 140 ns pdf pdffactory pro www.fineprint.cn
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